2SC3419 Silicon NPN Transistor

Toshiba Semiconductor

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications.2SC3419 Unit: mm * Low saturation v.

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Datasheet Specifications

Part number: 2SC3419
Manufacturer: Toshiba ↗ Semiconductor
File Size: 132.51 KB
Datasheet: 2SC3419_ToshibaSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* 2SC3419 Unit: mm
* Low saturation voltage: VCE (sat) = 0.25 V (typ. ) (IC = 500 mA, IB = 50 mA)
* High collector power dissipation: PC = 1.2 W (Ta = 25°C)
* Complementary to 2SA1356 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base

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2SC3419 Silicon NPN Transistor Toshiba Semiconductor

Toshiba Semiconductor 2SC3419-like datasheet