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2SC3419 Datasheet - Toshiba Semiconductor

2SC3419 Silicon NPN Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. 2SC3419 Unit: mm Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation: PC = 1.2 W (Ta = 25°C) Complementary to 2SA1356 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 40 V VCEO 40 V Emitter-base voltage Collector current .

2SC3419 Datasheet (132.51 KB)

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Datasheet Details

Part number:

2SC3419

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

132.51 KB

Description:

Silicon npn transistor.

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2SC3419 Silicon NPN Transistor Toshiba Semiconductor

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