* High breakdown voltage : VCEO≤300V.
* Excellent high frequency characteristics : Cre=1.8pF(typ).
* Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol
2SC3417
Sanyo Semicon Device
64.61 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications App.
📁 Related Datasheet
2SC3412 Power Transistor (Inchange Semiconductor)
2SC3413 Silicon NPN Epitaxial Transistor (Hitachi Semiconductor)
2SC3415 NPN Plastic-Encapsulated Transistor (SeCoS)
2SC3415 Triple Diffused Planar NPN Silicon Transistor (Rohm)
2SC3415S Chroma Amplifier Transistor (Rohm)
2SC3416 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3416 NPN Transistor (INCHANGE)
2SC3417 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC3419 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3419 NPN Transistor (INCHANGE)
