* High breakdown voltage : VCEO≤300V.
* Excellent high frequency characteristics : Cre=1.8pF(typ).
* Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol
2SC3417
Sanyo Semicon Device
64.61 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN1390D
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1353/2SC3417
Ultrahigh-Definition CRT Display Video Output Applications
App.
📁 Related Datasheet
2SC3412 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V (Min) ·High Power Dissipation ·Minimum Lot-to-Lot.
2SC3413 - Silicon NPN Epitaxial Transistor
(Hitachi Semiconductor)
2SC3413
Silicon NPN Epitaxial
Application
• Low frequency low noise amplifier • HF amplifier
Outline
SPAK
1
23
1. Emitter 2. Collector 3. Base
2.
2SC3415 - NPN Plastic-Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
2SC3415
0.1A , 300V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
2SC3415 - Triple Diffused Planar NPN Silicon Transistor
(Rohm)
.
2SC3415S - Chroma Amplifier Transistor
(Rohm)
2SC4061K / 2SC3415S / 2SC4015
Transistors
Chroma amplifier transistor (300V, 0.1A)
2SC4061K / 2SC3415S / 2SC4015
zFeatures 1) High breakdown voltage..
2SC3416 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
.. Ordering number:ENN1411C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1352/2SC3416
Ultrahigh-Definition CRT Display Video Out.
2SC3416 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 200V (Min) ·Complement to Type 2SA1352 ·Minimum Lot.
2SC3417 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SC3417
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.
/ Features
,。 High breakd.
