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2SC3424 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V (Min) Complement to Type 2SA1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for TV chroma output applications.

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Datasheet Details

Part number 2SC3424
Manufacturer INCHANGE
File Size 187.54 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V (Min) ·Complement to Type 2SA1361 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 50 mA ICP Collector Current-Peak 100 mA IB Base Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 mA 1.5 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3424 isc website：www.iscsemi.
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