2SC3446 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SC3446 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lo.

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Datasheet Specifications

Part number: 2SC3446
Manufacturer: Inchange Semiconductor
File Size: 216.54 KB
Datasheet: 2SC3446_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 3 A ICM Col

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2SC3446 Silicon NPN Power Transistor Inchange Semiconductor

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