2SC3479 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: 2SC3479
Manufacturer: Inchange Semiconductor
File Size: 200.03 KB
Datasheet: 2SC3479_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for high definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continu

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2SC3479 Power Transistor Inchange Semiconductor

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