2SC3474 Datasheet - Toshiba Semiconductor

2SC3474 - Silicon NPN Epitaxial Type TRANSISTOR

2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3474 Switching Applications Solenoid Drive Applications Industrial Applications Unit: mm High DC current gain: hFE = 500 (min) (IC = 400 mA) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature .

2SC3474_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SC3474

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

124.72 KB

Description:

Silicon npn epitaxial type transistor.

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2SC3474 Silicon NPN Epitaxial Type TRANSISTOR Toshiba Semiconductor