2SC3462 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CBO= 1100V(Min). Fast Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2SC3462
Manufacturer: Inchange Semiconductor
File Size: 195.55 KB
Datasheet: 2SC3462_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4.5 A ICM Collector Current-Pea

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2SC3462 Power Transistor Inchange Semiconductor

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