Part number:
2SC3460
Manufacturer:
Sanyo Semicon Device
File Size:
168.92 KB
Description:
Npn transistor.
* High breakdown voltage and high reliability.
* Fast switching speed (tf : 0.1µs typ).
* Wide ASO.
* Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3460] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter V
2SC3460
Sanyo Semicon Device
168.92 KB
Npn transistor.
📁 Related Datasheet
2SC3460 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3460
DESCRIPTION ·With TO-3PN package ·High brea.
2SC3460 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Mini.
2SC3461 - NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN1596C
NPN Triple Diffused Planar Type Silicon Transistor
2SC3461
800V/8A Switching Regulator Applications
Features
· High breakdow.
2SC3461 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3461
DESCRIPTION ·With TO-3PN package ·High brea.
2SC3461 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide Area of Saf.
2SC3462 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Mini.
2SC3465 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min) ·Fast Switching Speed ·Wide Area of Safe Operation ·Mini.
2SC3465 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3465
DESCRIPTION ·With TO-3 package ·High voltag.