2SC3460 - NPN Transistor

Sanyo Semicon Device

Datasheet Details

High breakdown voltage and high reliability.
Fast switching speed (tf : 0.1µs typ).
Wide ASO.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3460] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25˚.

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Published: Mar 22, 2005 |