2SC3467 Datasheet - Sanyo Semicon Device

2SC3467 PNP/NPN Epitaxial Planar Silicon Transistors

2SC3467 Features

* High breakdown voltage : VCEO≥200V.

* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).

* Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1370/2SC3467] ( ) : 2SA1370 Specifications Absolute Maximum Ratings a

Datasheet Details

2SC3467

Sanyo Semicon Device

136.41 KB

Pnp/npn epitaxial planar silicon transistors.

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