* High breakdown voltage : VCEO≥200V.
* Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
* Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1370/2SC3467] ( ) : 2SA1370 Specifications Absolute Maximum Ratings a
2SC3467
Sanyo Semicon Device
136.41 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use .
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