2SC3467 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3467
Manufacturer	Sanyo Semicon Device
File Size	136.41 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3467_SanyoSemiconDevice.pdf

High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.2pF (NPN), 1.7pF (PNP).
Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1370/2SC3467] ( ) : 2SA1370 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tem.

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Published: Mar 22, 2005 |