Part number:
2SC3651
Manufacturer:
Kexin
File Size:
67.76 KB
Description:
Transistor.
* High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V) Very small size making it easy to provide high-density small-sized hybrid IC's. Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base vol
2SC3651
Kexin
67.76 KB
Transistor.
📁 Related Datasheet
2SC3650 - General-Purpose Amplifier
(GME)
Production specification
High hFE,Low-Frequency General-Purpose Amplifier Applications
FEATURES
Pb
High DC current gain.
Lead-free
Low colle.
2SC3650 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-P.
2SC3650 - Transistor
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Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
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Elektronische Bauelemente
2SC3650
1.2 A , 30 V NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package. Large Current Capacity. High DC Curre.
2SC3650 - Transistor
(Jin Yu Semiconductor)
2SC3650
SOT-89-3L
TRANSISTOR (NPN)
FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amp.
2SC3650 - NPN Transistor
(WEJ)
RoHS 2SC3650
2SC3650 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 1.2 A Collector-base voltage
.
2SC3651 - NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
.
2SC3652 - SILICON NPN EPITAXIAL TRANSISTOR
(Hitachi Semiconductor)
2SC3652
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
TO-126 MOD
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings.