* 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature S
2SC4104
Kexin
55.66 KB
Npn epitaxial planar silicon transistor.
SMD Type
Transistors IC
NPN Epitaxial Planar Silicon Transistor 2SC4104
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
High fT. Small reve.
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2SC4102 - Silicon Transistor
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Silicon Epitaxial Planar Transistor
FEATURES
Excellent hFE linearity. Power dissipation:PCM=200mW
Pb
Lead-free
Production specification
2SC4102.
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(Rohm)
2SC4102 / 2SC3906K
High-voltage Amplifier Transistor (120V, 50mA)
Datasheet
Parameter
VCEO IC
Value
120V 50mA
lFeatures
1)High breakdown voltage. .
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SMD Type
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Transistors
Features
High breakdown voltage.(VCEO = 120V)
1 Emitter 2 Base 3 Collector
Absolute.
2SC4102 - TRANSISTOR
(Jin Yu Semiconductor)
2SC4102 TRANSISTOR (NPN)
FEATURES High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO .
2SC4104 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:EN3172
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2SA1580/2SC4104
High-Definition CRT Display Applications
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2SC4105 - NPN Transistor
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isc Silicon NPN Power Transistor
2SC4105
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
: V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Ar.
2SC4105 - NPN Triple Diffused Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number:EN2470A
NPN Triple Diffused Planar Silicon Transistor
2SC4105
400V/4A Switching Regulator Applications
Features
· High breakdown vol.
