Datasheet4U Logo Datasheet4U.com

2SK2857

MOS Field Effect Transistor

2SK2857 Features

* Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A) SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1

2SK2857 Datasheet (40.67 KB)

Preview of 2SK2857 PDF

Datasheet Details

Part number:

2SK2857

Manufacturer:

Kexin

File Size:

40.67 KB

Description:

Mos field effect transistor.

📁 Related Datasheet

2SK2850 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·Minimum Lo.

2SK2850-01 - N-Channel MOSFET (Fuji Electric)
.

2SK2851 - N-Channel MOSFET (Hitachi Semiconductor)
2SK2851 Silicon N Channel MOS FET High Speed Power Switching ADE-208-478 1st. Edition Features • Low on-resistance R DS(on) = 0.055Ω typ. (at VGS = 1.

2SK2854 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2854 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2854 UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this d.

2SK2855 - N-Channel MOSFET (Toshiba Semiconductor)
2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APPLICATION (Note)The TOSHIBA products listed in this d.

2SK2856 - N-Channel MOSFET (Toshiba Semiconductor)
.

2SK2857 - N-Channel MOSFET (NEC)
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SK2857 is a switching .

2SK2857C - N-CHANNEL MOSFET (Renesas)
Preliminary Data Sheet 2SK2857C N-CHANNEL MOSFET FOR SWITCHING R07DS1261EJ0200 Rev.2.00 Jun 11, 2015 Description The 2SK2857C, N-channel vertical t.

TAGS

2SK2857 MOS Field Effect Transistor Kexin

2SK2857 Distributor