2SK2857 - MOS Field Effect Transistor
2SK2857 Features
* Can be driven by a 5V power source. Low On-state resistance : RDS(on)1 = 220 m MAX. (VGS = 4 V, ID = 1.5 A) RDS(on)2 = 150 m MAX. (VGS = 10 V, ID = 2.5 A) SOT-89 4.50+0.1 -0.1 1.80+0.1 -0.1 12 3 0.48+0.1 -0.1 0.53+0.1 -0.1 +0.12.50 -0.1 +0.14.00 -0.1 MOSFET Unit: mm 1.50+0.1 -0.1 0.44+0.1 -0.1
