2SK2992
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N-channel mosfet.
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2SK2991 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2991
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2991
DC−DC Converter Relay Drive and Motor Drive Applications
z Low d.
2SK2992 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2992
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2992
Chopper Regulator, DC−DC Converter and Motor Drive Applications
.
2SK2993 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DC−DC Converter and Motor Drive Applications
l.
2SK2995 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK2995
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2995
Chopper Regulator, DC−DC Converter and Motor Drive Applications
l.
2SK2996 - N-Channel MOSFET
(Toshiba Semiconductor)
..
2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2996
DC−DC Converter, Relay Drive and Motor Drive.
2SK2996 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Low leakage current ·High forward t.
2SK2998 - Silicon N Channel MOS Type Field Effect Transistor
(Toshiba Semiconductor)
2SK2998
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2998
Chopper Regulator, DC−DC Converter Applications
Unit: mm
z Low .
2SK2900-01 - N-channel MOS-FET
(Fuji Electric)
> Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MO.
2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.
2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET
(Fuji Electric)
2SK2901-01L,S
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
.