2SK2991 Datasheet - Toshiba Semiconductor

2SK2991 Silicon N Channel MOS Type Field Effect Transistor

2SK2991 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2991 DC DC Converter Relay Drive and Motor Drive Applications z Low drain source ON resistance : RDS (ON) = 1.35 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain <.

2SK2991 Features

* nvironmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or loss

2SK2991_ToshibaSemiconductor.pdf