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2SK2903-01MR - N-CHANNEL SILICON POWER MOS-FET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15.

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2SK2900-01 N-channel MOS-FET
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2SK2903-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±50 ±200 ±30 720.8 50 +150 -55 to +150 Unit Equivalent circuit schematic Drain(D) V A A V mJ W °C °C *1 L=0.