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2SK2901-01S - N-CHANNEL SILICON POWER MOS-FET

Key Features

  • High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8.
  • 0.1 5.08 2.7 +0.2.

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Part Number Description
2SK2901-01L N-CHANNEL SILICON POWER MOS-FET
2SK2900-01 N-channel MOS-FET
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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 +0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 0.4 +0.2 1. Gate 2, 4. Drain 3. Source 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 60 ±45 ±180 ±30 461.