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2SK2996
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2996
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.74 Ω (typ.) : |Yfs| = 6.8 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 600 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 10 30 45 252 10 4.
2SK2996 Datasheet
