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2SK2996 - N-Channel MOSFET Transistor

Datasheet Summary

Features

  • Drain Current ID= 10A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Low leakage current.
  • High forward transfer admittance.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number 2SK2996
Manufacturer Inchange Semiconductor
File Size 224.35 KB
Description N-Channel MOSFET Transistor
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Low leakage current ·High forward transfer admittance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter,Relay Drive and motor Drive Application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.
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