Full PDF Text Transcription for 2SK2996 (Reference)
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2SK2996. For precise diagrams, and layout, please refer to the original PDF.
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Low leakage current ·High forward transfer admittance ·...
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SS= 600V(Min) ·Low leakage current ·High forward transfer admittance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC converter,Relay Drive and motor Drive Application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~150 ℃ MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.78 ℃/W Rth j-a Thermal Res
2SK2996 Datasheet
