• Part: 2SK2992
  • Description: Silicon N Channel MOS Type Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 390.50 KB
Download 2SK2992 Datasheet PDF
Toshiba
2SK2992
2SK2992 is Silicon N Channel MOS Type Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSV) Chopper Regulator, DC- DC Converter and Motor Drive Applications Unit: mm z Low drain- source ON resistance : RDS (ON) = 2.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 200 V) z Enhancement mode : Vth = 2.0 to 3.5 V (VDS = 10 V, ID = 1 m A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation Drain power dissipation (Note 2) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 4) Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD IAR EAR Tch Tstg 200 200 ±20 1 3 0.5 1.5 1 0.05 150 - 55~150 V V V A A W W m J A m J °C °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1B Weight: 0.05 g...