2SK2992 Datasheet | Kexin Semiconductor

Features - VDS (V) = 200V - ID = 1 A (VGS = 10V) - RDS(ON) ＜ 3.5Ω (VGS = 10V) - High Forward Transfer Amdittance - Low Leakage Current 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=20KΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Repetitive Avalanche Energy Single Pulse Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID IDM IAR PD EAR EAS Rth JA TJ Tstg Rating 200 200 ±20 1 3 1 1.5 0.15 36 250 150 -55 to 150 Note.1:VDD = 50 V, TJ = 25°C (initial), L = 56.7 m H, RG = 25 Ω, IAR = 1 A Unit V A W m J ℃/W ℃ .kexin..cn 1 SMD Type N-Channel MOSFET 2SK2992 - Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Symbol VDSS IDSS IGSS VGS(th) RDS(On) g FS Ciss Coss Crss Qg Qgs Qgd Turn-On Delay Time td(on) Test Conditions ID=10m A, VGS=0V VDS=200V, VGS=0V VDS=0V, VGS=±16V VDS=10V, ID=1m A VGS=10V, ID=0.5A VDS=10V, ID=0.5A VGS=0V, VDS=10V, f=1MHz VGS=10V, VDS=160V, ID=1A Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current Pulse Drain Reverse Current Diode Forward Voltage tf trr IDR= 1A,VGS=0, d I/dt= 100A/μs Qrr IS ISM VSD IS=1A,VGS=0V MOSFET Min Typ Max Unit 200 V 100 u A ±10 u A 2 3.5 V 3.5 Ω 0.5 S 90 10 p F 30 3 1.8 n C 1.2 9 45...