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2SK2992 - N-Channel MOSFET

Key Features

  • s.
  • VDS (V) = 200V.
  • ID = 1 A (VGS = 10V).
  • RDS(ON) < 3.5Ω (VGS = 10V).
  • High Forward Transfer Amdittance.
  • Low Leakage Current 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=20KΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Repetitive Avalanche Energy Single Pulse Avalanche Energy (Note.1) Thermal Resistance. Junctio.

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Full PDF Text Transcription for 2SK2992 (Reference)

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SMD Type N-Channel MOSFET 2SK2992 MOSFET ■ Features ● VDS (V) = 200V ● ID = 1 A (VGS = 10V) ● RDS(ON) < 3.5Ω (VGS = 10V) ● High Forward Transfer Amdittance ● Low Leakage ...

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) < 3.5Ω (VGS = 10V) ● High Forward Transfer Amdittance ● Low Leakage Current 1.70 0.1 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Drain-Gate Voltage (RGS=20KΩ) Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Power Dissipation Repetitive Avalanche Energy Single Pulse Avalanche Energy (Note.1) Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Symbol VDS VDG VGS ID IDM IAR PD EAR EAS RthJA TJ Tstg Rating 200 200 ±20 1 3 1 1.5 0.15 36 250 150 -55 to 150 Note.1:VDD = 50 V, TJ = 25°C (initial