Click to expand full text
2SK2998
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2998
Chopper Regulator, DC−DC Converter Applications
Unit: mm
z Low drain−source ON-resistance
: RDS (ON) = 11.5 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 0.4 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS 500 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
500
V
Gate−source voltage
VGSS ±30 V
Drain current
DC (Note 1) Pulse (Note 1)
ID IDP
0.5 A 1.5 A
Drain power dissipation
PD 0.
2SK2998 Datasheet
