Full PDF Text Transcription for 2SK2998 (Reference)
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2SK2998 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2998 Chopper Regulator, DC−DC Converter Applications Unit: mm z Low drain−source ON-resista...
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r, DC−DC Converter Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 11.5 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.4 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 500 V) z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 500 V Drain−gate voltage (RGS = 20 kΩ) VDGR 500 V Gate−source voltage VGSS ±30 V Drain current DC (Note 1) Pulse (Note 1) ID IDP 0.5 A 1.5 A Drain power dissipation PD 0.
2SK2998 Datasheet
