Datasheet Specifications
- Part number
- KRC881T
- Manufacturer
- Korea Electronics
- File Size
- 386.55 KB
- Datasheet
- KRC881T_KoreaElectronics.pdf
- Description
- (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.AUDIO MUTING APPLICATION.KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E .
Features
* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ. ) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F G K 1 B K 6 Low on resistance : Ron=1 (Typ. ) (IB=5mA) 2 5 4 DIM A B C D E DKRC881T Distributors
📁 Related Datasheet
📌 All Tags