KRC884T, KRC881T Datasheet - Korea Electronics

KRC884T (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR

KRC884T Features

* High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. C A F G K 1 B K 6 Low on resistance : Ron=1 (Typ.) (IB=5mA) 2 5 4 DIM A B C D E D

KRC881T_KoreaElectronics.pdf

KRC884T Datasheet Preview — This datasheet PDF includes multiple part numbers: KRC884T, KRC881T. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

KRC884T, KRC881T

Manufacturer:

Korea Electronics

File Size:

386.55 KB

Description:

(krc881t - krc886t) epitaxial planar npn transistor.

Note:

This datasheet PDF includes multiple part numbers: KRC884T, KRC881T.
Please refer to the document for exact specifications by model.

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TAGS

KRC884T KRC881T KRC881T KRC886T EPITAXIAL PLANAR NPN TRANSISTOR Korea Electronics

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