LMP3153JZF
Features
- -30V/-4.8A, RDS(ON)<54mΩ@VGS=-10V
- -30V/-3.8A, RDS(ON)<72mΩ@VGS=-4.5V
- -30V/-3.0A, RDS(ON)<120mΩ@VGS=-2.5V
- Suit for -4.5V Gate Drive Applications
- SOT-23 package design provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Applications
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
- Notebook
- LED display
- DC-DC System
- LDC Panel
Pin Configuration
LMP3153JZF (SOT-23)
Description
Gate
Source
Drain
Notice: The information in this document is subject to change without notice.
Email:amy@lfc-semi. .lfc-semi.
Ordering Information
Part Number LMP3153JZF
P/N LMP3153
Rev. 1.0
Ordering Information
PKG code
Pb Free code
Package...
