LMP3153SF Overview
LMP3153SF, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in mercial industrial surface mount applications. The information in this document is subject to change without notice.
LMP3153SF Key Features
- RDS(ON)=54mΩ@VGS=-10V
- RDS(ON)=72mΩ@VGS=-4.5V
- RDS(ON)=120mΩ@VGS=-2.5V
- Suit for -2.5V Gate Drive