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LMP3117SF - 30V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V/-13.8A, RDS(ON).

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Datasheet preview – LMP3117SF

Datasheet Details

Part number LMP3117SF
Manufacturer LFC semi
File Size 0.96 MB
Description 30V P-Channel MOSFET
Datasheet download datasheet LMP3117SF Datasheet
Additional preview pages of the LMP3117SF datasheet.

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Full PDF Text Transcription

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LMP3117SF Rev. 1.0 LMP3117SF 30V P-Channel MOSFET Features  -30V/-13.8A, RDS(ON)<18mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  SOP-8 package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications..
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