Datasheet4U Logo Datasheet4U.com

LMP3117DF - 30V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V/-44A, RDS(ON).

📥 Download Datasheet

Datasheet preview – LMP3117DF

Datasheet Details

Part number LMP3117DF
Manufacturer LFC semi
File Size 966.85 KB
Description 30V P-Channel MOSFET
Datasheet download datasheet LMP3117DF Datasheet
Additional preview pages of the LMP3117DF datasheet.

📁 Similar Datasheet

  • LMP2011 - Single High Precision Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LMP2011 - High Precision / Rail-to-Rail Output Operational Amplifier (National Semiconductor)
  • LMP2012 - Dual High Precision Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LMP2012 - High Precision / Rail-to-Rail Output Operational Amplifier (National Semiconductor)
  • LMP2012QML - Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LMP2014 - High Precision / Rail-to-Rail Output Operational Amplifier (National Semiconductor)
  • LMP2014MT - Rail-to-Rail Output Operational Amplifier (Texas Instruments)
  • LMP2015 - Rail-to-Rail Output Operational Amplifier (National Semiconductor)
  • LMP2016 - Rail-to-Rail Output Operational Amplifier (National Semiconductor)
  • LMP2021 - EMI-Hardened Amplifiers (Texas Instruments)
Other Datasheets by LFC semi

Full PDF Text Transcription

Click to expand full text
LMP3117DF Rev. 1.0 LMP3117DF 30V P-Channel MOSFET Features  -30V/-44A, RDS(ON)<14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  TO-252-2L package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Published: |