LMP3131RF Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, Notebook Load Switch Battery Protection Hand-held Instruments LMP3131RF (SOT-23-6L) PIN Description 1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain LMP3131RF Notice: The information in this document is subject to change without notice.
LMP3131RF Key Features
- 30V/-5.5A, RDS(ON)<32mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive
LMP3131RF Applications
- Green Device Available