LMP3131JZF Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, Notebook Load Switch Battery Protection Hand-held Instruments LMP3131JZF (SOT-23) PIN Description 1 Gate 2 Source 3 Drain LMP3131JZF Notice: The information in this document is subject to change without notice.
LMP3131JZF Key Features
- 30V/-5A, RDS(ON)<32mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive
LMP3131JZF Applications
- Green Device Available