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LMP3117ZF - 30V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The P-Channel enhancement mode power field effect transistors is using trench DMOS technology.

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Features

  • RDS(ON)=13.5mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – LMP3117ZF

Datasheet Details

Part number LMP3117ZF
Manufacturer LFC semi
File Size 637.60 KB
Description 30V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet LMP3117ZF Datasheet
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Full PDF Text Transcription

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LMP3117ZF Rev. 1.0 LMP3117ZF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=13.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  DFN3X3-8L package design commutation mode. This device is well suited for high efficiency fast switching applications. Product Description The P-Channel enhancement mode power field effect transistors is using trench DMOS technology.
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