LMP3117ZF - 30V P-Channel Enhancement Mode MOSFET

General Description

The P-Channel enhancement mode power field effect transistors is using trench DMOS technology.

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Key Features

RDS(ON)=13.5mΩ@VGS=-10V.
Fast switching.
Suit for -4.5V Gate Drive.

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LMP3117ZF 30v p-channel enhancement mode mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMP3117ZF
Manufacturer	LFC semi
File Size	637.60 KB
Description	30V P-Channel Enhancement Mode MOSFET
Datasheet	LMP3117ZF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LMP3117ZF Rev. 1.0 LMP3117ZF 30V P-Channel Enhancement Mode MOSFET Features  RDS(ON)=13.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  DFN3X3-8L package design commutation mode. This device is well suited for high efficiency fast switching applications. Product Description The P-Channel enhancement mode power field effect transistors is using trench DMOS technology.