Datasheet Summary
Rev. 1.0
LMP3117ZF 30V P-Channel Enhancement Mode MOSFET
Features
- RDS(ON)=13.5mΩ@VGS=-10V
- Fast switching
- Suit for -4.5V Gate Drive Applications
- Green Device Available
- DFN3X3-8L package design mutation mode. This device is well suited for high efficiency fast switching applications.
Product Description The P-Channel enhancement mode power field effect transistors is using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
Applications
- MB / VGA / Vcore
- POL Applications
- Load Switch
- LED Application
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