LMP3117XF - 30V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

-30V/-42A, RDS(ON)=14.5mΩ@VGS=-10V.
Fast switching.
Suit for -4.5V Gate Drive.

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LMP3117XF 30v p-channel mosfet by LFC semi - Datasheet Preview

Datasheet Details

Part number	LMP3117XF
Manufacturer	LFC semi
File Size	0.96 MB
Description	30V P-Channel MOSFET
Datasheet	LMP3117XF Datasheet

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Full PDF Text Transcription (Reference)

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LMP3117XF Rev. 1.0 LMP3117XF 30V P-Channel MOSFET Features  -30V/-42A, RDS(ON)=14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  DFN5X6-8L package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications..