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LMP3117XF - 30V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V/-42A, RDS(ON)=14.5mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet preview – LMP3117XF

Datasheet Details

Part number LMP3117XF
Manufacturer LFC semi
File Size 0.96 MB
Description 30V P-Channel MOSFET
Datasheet download datasheet LMP3117XF Datasheet
Additional preview pages of the LMP3117XF datasheet.

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Full PDF Text Transcription

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LMP3117XF Rev. 1.0 LMP3117XF 30V P-Channel MOSFET Features  -30V/-42A, RDS(ON)=14.5mΩ@VGS=-10V  Fast switching  Suit for -4.5V Gate Drive Applications  Green Device Available  DFN5X6-8L package design Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications..
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