Datasheet Summary
Rev. 1.0
LMP3153JZF 30V P-Channel MOSFET
Features
- -30V/-4.8A, RDS(ON)<54mΩ@VGS=-10V
- -30V/-3.8A, RDS(ON)<72mΩ@VGS=-4.5V
- -30V/-3.0A, RDS(ON)<120mΩ@VGS=-2.5V
- Suit for -4.5V Gate Drive Applications
- SOT-23 package design provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Applications
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
- Notebook
- LED display
- DC-DC System
- LDC...