Part number:
3N165
Manufacturer:
LINEAR SYSTEMS
File Size:
293.38 KB
Description:
Dual p-channel mosfet.
* VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA=25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 40 V 3N166 30 V Gate-Gate Voltage ±80 V Drain Current (NOTE 2) 50 mA Storage Temperatur
3N165
LINEAR SYSTEMS
293.38 KB
Dual p-channel mosfet.
📁 Related Datasheet
3N161 - DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH
(Intersil Corporation)
.
3N163 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N163 - High Speed Switch
(Micross)
3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N163 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N164 - P-Channel Enhancement-Mode MOS Transistors
(Siliconix)
3N163 SERIES
P·Channel Enhancement·Mode MOS Transistors
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(fi) (mA) PACKAGE
3N163
-40
250
-5.
3N164 - High Speed Switch
(Micross)
3N164 P-CHANNEL MOSFET
The 3N164 is an enhancement mode P-Channel Mosfet
The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a Gene.
3N164 - P-CHANNEL ENHANCEMENT MODE MOSFET
(LINEAR SYSTEMS)
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
MOSFET
FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANC.
3N165 - Monolithic Dual P-Channel Enhancement Mode MOSFET
(Calogic LLC)
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Bre.
