3N100E MTB3N100E

Motorola

Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .

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Datasheet Specifications

Part number: 3N100E
Manufacturer: Motorola
File Size: 207.36 KB
Datasheet: 3N100E_Motorola.pdf
Description: MTB3N100E

Features

* ates the mathematics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figu

Applications

* that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage
* blocking capability without degrading perforwww. DataSheet4U. com mance over time. In addition, this advan

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3N100E MTB3N100E Motorola

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