* high breakdown voltage, low transfer capacitance, and tetrode configuration for a broad range of applications. CASE 20 TO-72 O2 o STYLE4 PIN 1. SOURCE 2. GATE 10 0 3 3. DRAIN o 4. GATE2- 4 ~~~~TRATE AND MAXIMUM RATINGS Rating Symbol Value Unit Reverse Gate-Source Voltage Gate 1 Gate 2
3N126
ETC
308.79 KB
N-channel transistor.
3N 124 (SILICON) 3N125 3N126
N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.
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3N120-E3 - 1200V N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
3N120-E3
Preliminary
3.0A, 1200V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 3N120-E3 provide excellent RDS(ON), l.
3N124 - N-channel Transistor
(ETC)
3N 124 (SILICON) 3N125 3N126
N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.
3N125 - N-channel Transistor
(ETC)
3N 124 (SILICON) 3N125 3N126
N-:channel silicon annular tetrode-connected fieldeffect transistors, designed for low-power switching and amplifier app.
3N128 - MOSFET AMPLIFIER
(Motorola)
MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°.
3N128 - Silicon MOS Transistor
(General Electric Solid State)
.
3N100E - MTB3N100E
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount .
3N1012 - Power-Transistor
(Infineon)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
3N10L26 - Power-Transistor
(Infineon)
OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating t.
