Description
The LSK389 Series, Monolithic Dual N-Channel JFETs were specifically designed to provide users a better performing, less time consuming and cheaper solution for obtaining tighter IDSS matching, and better thermal tracking, than matching individual JFETs.
Features
- Ultra Low Noise: en = 1.9nV/√Hz (typ), f = 1kHz and NBW = 1Hz.
 
- Tight Matching: IVGS1-2I = 20mV max.
 
- High Breakdown Voltage: BVGSS =
40V max.
 
- High Gain: Gfs = 20mS (typ).
 
- Low Capacitance: 25pF typ.
 
- Improved Second Source
Replacement for 2SK389
Benefits.
 
- Unique Monolithic Dual Design Construction of Interleaving Both JFETs on the Same Piece of Silicon.
 
- Excellent Matching and Thermal Tracking.
 
- Great for Maximizing Battery Operated.