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LSK389D - Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier

This page provides the datasheet information for the LSK389D, a member of the LSK389 Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier family.

Description

The LSK389 Series, Monolithic Dual N-Channel JFETs were specifically designed to provide users a better performing, less time consuming and cheaper solution for obtaining tighter IDSS matching, and better thermal tracking, than matching individual JFETs.

Features

  • Ultra Low Noise: en = 1.9nV/√Hz (typ), f = 1kHz and NBW = 1Hz.
  • Tight Matching: IVGS1-2I = 20mV max.
  • High Breakdown Voltage: BVGSS = 40V max.
  • High Gain: Gfs = 20mS (typ).
  • Low Capacitance: 25pF typ.
  • Improved Second Source Replacement for 2SK389 Benefits.
  • Unique Monolithic Dual Design Construction of Interleaving Both JFETs on the Same Piece of Silicon.
  • Excellent Matching and Thermal Tracking.
  • Great for Maximizing Battery Operated.

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Datasheet preview – LSK389D

Datasheet Details

Part number LSK389D
Manufacturer Linear SYSTEMS
File Size 718.52 KB
Description Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier
Datasheet download datasheet LSK389D Datasheet
Additional preview pages of the LSK389D datasheet.

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Full PDF Text Transcription

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LSK389 A/B/C/D Ultra Low Noise Monolithic Dual N-Channel JFET Amplifier Absolute Maximum Ratings @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation @ +25°C Maximum Currents Gate Forward Current Maximum Voltages Gate to Source Gate to Drain -65 to +150°C -55 to +135°C 400mW IG(F) = 10mA VGSS = 40V VGDS = 40V S2 4 D2 5 G2 6 3 G1 2 D1 1 S1 TO-71 6L Top View SOIC 8L Top View Features  Ultra Low Noise: en = 1.
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