LDTC123JM3T5G - Bias Resistor Transistors
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors NPN Silicon Surface Mount Transistors LDTC114EM3T5G Series With Monolithic Bias Resistor Network S-LDTC114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter 3 resistor.
The BRT eliminates these
LDTC123JM3T5G Features
* SHAN RADIO COMPANY, LTD. S-LDTC114EM3T5G ;S-S-LDTC114EM3T5G Series TYPICAL ELECTRICAL CHARACTERISTICS
* LDTC114YM3T5G 1 IC/IB = 10 0.1 0.01 TA =
* 25°C 25°C 75°C 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC 80 hFE, DC CURRENT GAIN (NORMALIZED) 300 V
