* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications we declare that the material of product compliance with RoHS requirements. ▼ Low on-resistance ▼ Capable of 2.5V gate drive ▼ L
LN9926L
LRC
324.46 KB
20v dual n-channel enhancement-mode mosfet.
LESHAN RADIO COMPANY, LTD. 20V Dual N-Channel Enhancement-Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@4A = 28 m RDS(ON), Vgs@2.5V, Ids@2A = 40 m Feat.
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