LN9926LT1G

Dual N-Channel Enhancement-Mode MOSFET

LRC

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Datasheet Details

Part number:

LN9926LT1G

Manufacturer:

LRC

File Size:

413.90 KB

Description:

Dual n-channel enhancement-mode mosfet.
LESHAN RADIO COMPANY, LTD. LN9926LT1GDual N-Channel Enhancement-Mode MOSFET (20V, 6A) Description .
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has bee.

✔ LN9926LT1G Features

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A
High Density Cell Design for Ultra Low On-Resistance
High Power and Current Handing Capability
Fully

✔ LN9926LT1G Application

with a wide range of gate drive voltage (2.5V-10V) Features
RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@V

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LN9926LT1G Dual N-Channel Enhancement-Mode MOSFET LRC

Datasheet Details

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Description:

✔ LN9926LT1G Features

✔ LN9926LT1G Application

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