LP4101LT3G Features
* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Un
Datasheet Details
LP4101LT3G, LP4101LT1G
LRC
656.86 KB
20v p-channel mosfet.
This datasheet PDF includes multiple part numbers: LP4101LT3G, LP4101LT1G.
Please refer to the document for exact specifications by model.
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LP4101LT3G Distributor
