LSI1012LT1G
FEATURES
D Trench FETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation
LSI1012LT1G S-LSI1012LT1G
1 2
SOT-23
Gate 1
3 Drain
APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
LSI1012LT1G S-LSI1012LT1G
LSI1012LT3G S-LSI1012LT3G
Marking
Shipping
A2 3000/Tape&Reel
A2 10000/Tape&Reel
Source 2
(Top View)
MARKING DIAGRAM 3
A2 12
A2 = Specific Device Code M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS...
