S-LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET

Product Overview

LRC

Part number	S-LSI1012LT1G
Manufacturer	LRC
File Size	440.11 KB
Description	N-Channel 1.8-V (G-S) MOSFET
Datasheet	S-LSI1012LT1G Datasheet
Additional preview pages of the S-LSI1012LT1G datasheet.

D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 0.7 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 10 ns D S- Prefix for Automotive and Other.

📁 Similar Datasheet

S-L1SS400CST5G - Switching diode (Leshan Radio Company)
S-L1SS400T1G - Switching Diode (Leshan Radio Company)
S-L2980 - CMOS VOLTAGE REGULATOR (ABLIC)
S-L2980 - High Ripple Rejection Low Dropout CMOS Voltage Regulator (Seiko Instruments)
S-L2985 - High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator (Seiko Instruments)
S-L2N7002LT1G - Small Signal MOSFET (Leshan Radio Company)
S-L2SA1365ELT1G - General Purpose Transistor (Leshan Radio Company)
S-L2SA1365ELT3G - General Purpose Transistor (Leshan Radio Company)

Other Datasheets by LRC

Published: Apr 18, 2016 |