S-LSI1013LT1G Datasheet | LRC

LESHAN RADIO PANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G Features D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. BENEFITS D Ease in Driving Switches D Low Offset (Error) Voltage D Low-Voltage Operation D High-Speed Circuits D Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter...