LUF12N65 650V N-Channel Enhancement Mode MOSFET

Description

LUP12N65 / LUF12N65 650V N-Channel Enhancement Mode MOSFET Product General .
These enhancement mode power filed effect transistors havebeen advanced technology design to provide low on-state resistance, high avalanche energy.

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Datasheet Specifications

Part number: LUF12N65
Manufacturer: LUL
File Size: 175.16 KB
Datasheet: LUF12N65-LUL.pdf
Description: 650V N-Channel Enhancement Mode MOSFET

Features

* 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A
* Low On-state Resistance
* Fast Switching
* Low Gate Charge
* Fully Characterized Avalanche Voltage and Current Marking and Order Information TYPE LUP12N65 LUF12N65 MARKING P12N65 F12N65 PACKAGE TO-220 TO-220F PACKING 50

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LUF12N65 650V N-Channel Enhancement Mode MOSFET LUL

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