FX2N7002KMFH-06S3G - N-Channel MOSFET
FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
FX2N7002KMFH-06S3G Features
* RDS(ON) ≦3Ω@VGS=10V
* RDS(ON) ≦4Ω@VGS=4.5V
* RDS(ON) ≦4.5Ω@VGS=3V
* ESD Protection HBM >2KV
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability Applications
* Power Management in Note book
* Porta
