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FX2N7002KMFH-06S3G Datasheet - LYG

FX2N7002KMFH-06S3G N-Channel MOSFET

FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. .

FX2N7002KMFH-06S3G Features

* RDS(ON) ≦3Ω@VGS=10V

* RDS(ON) ≦4Ω@VGS=4.5V

* RDS(ON) ≦4.5Ω@VGS=3V

* ESD Protection HBM >2KV

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and maximum DC current capability Applications

* Power Management in Note book

* Porta

FX2N7002KMFH-06S3G-LYG.pdf

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Datasheet Details

Part number:

FX2N7002KMFH-06S3G

Manufacturer:

LYG

File Size:

1.12 MB

Description:

N-channel mosfet.

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FX2N7002KMFH-06S3G FX2N7002KMFH-06S3G N-Channel MOSFET LYG

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