FX2N7002KMFH-06S3G - N-Channel MOSFET

FX2N7002KMFH-06S3G Datasheet Preview — Preview of FX2N7002KMFH-06S3G PDF

Datasheet Details

Part number	FX2N7002KMFH-06S3G
Manufacturer	LYG
File Size	1.12 MB
Description	N-Channel MOSFET
Datasheet	FX2N7002KMFH-06S3G-LYG.pdf

FX2N7002KMFH-06S3G Product details

Description

FX2N7002KMFH-06S3G N-Channel 60V(DS)MOSFET-ESD Protected The FX2N7002KMFH-06S3G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits and low in-line power loss are neede

Features

RDS(ON) ≦3Ω@VGS=10V.
RDS(ON) ≦4Ω@VGS=4.5V.
RDS(ON) ≦4.5Ω@VGS=3V.
ESD Protection HBM >2KV.
Super high density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.

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Published: Mar 20, 2025 |