* High total dissipation, high hFE and low V .CE(sat) /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -30 V VCEO -25 V VEBO -5.0 V IC -700 mA IB -150 mA PC 600 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1)
3CG952
LZG
254.76 KB
Silicon pnp transistor.
2SA952(3CG952)
PNP /SILICON PNP TRANSISTOR
:、/Purpose: Output stage of portable radio
and cassette type tape recorder, general purpose applications.
📁 Related Datasheet
3CG950 SILICON PNP TRANSISTOR (LZG)
3CG953 SILICON PNP TRANSISTOR (LZG)
3CG953M SILICON PNP TRANSISTOR (LZG)
3CG9012 PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG9015 PNP EPITAXIAL SILICON TRANSISTOR (JILIN SINO)
3CG9015 SILICON PNP TRANSISTOR (BLUE ROCKET ELECTRONICS)
3CG926 SILICON PNP TRANSISTOR (LZG)
3CG937 SILICON PNP TRANSISTOR (LZG)
3CG94T Silicon PNP transistor (BLUE ROCKET ELECTRONICS)
3CG966 SILICON PNP TRANSISTOR (LZG)
