* Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS 200 V ID(Tc=25℃) 18 A ID(Tc=100℃) 11.4 A IDM 72 A VGSS ±30 V EAS 250 mJ EAR 13.9 mJ IAR 18 A PD(Tc=25℃) 43 W TJ,TSTG -55 to 150 ℃ /Electrical Characteristics(Ta=25℃)
CS640F
LZG
192.46 KB
N-channel mosfet.
IRFS640(CS640F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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