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CS64N18 - N-Channel Trench Power MOSFET

General Description

The CS64N18 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.

Key Features

  • VDS=82V; ID=137A@ VGS=10V; RDS(ON).

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Datasheet Details

Part number CS64N18
Manufacturer CASS
File Size 654.14 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS64N18 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CS64N18 N-Channel Trench Power MOSFET General Description The CS64N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=82V; ID=137A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDS = 82 V ID = 137 A RDS(ON) = 4.5 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS64N18 CS64N18 TO-220 Reel Size - Table 1.