Datasheet4U Logo Datasheet4U.com

CS60N06A - N-Channel Trench Power MOSFET

General Description

The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applications.

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

Key Features

  • VDS=60V;ID=68A@ VGS=10V; RDS(ON).

📥 Download Datasheet

Datasheet Details

Part number CS60N06A
Manufacturer CASS
File Size 624.76 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS60N06A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Trench Power MOSFET General Description The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications. Features ● VDS=60V;ID=68A@ VGS=10V; RDS(ON)<8.4mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply CS60N06A To-220 Top View Schematic Diagram VDS = 60 V ID = 68A RDS(ON) = 7mΩ Package Marking and Ordering Information Device Marking Device Device Package CS60N06A CS60N06A TO-220 Reel Size - Table 1.