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CS60N06A Datasheet PDF

CASS CS60N06A

The CS60N06A is N-channel MOS Field Effect Transistor designed for high current switching applications.
Part No. CS60N06A
Datasheet CS60N06A Download
Manufacturer CASS
Description N-Channel Trench Power MOSFET
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CS60N06A datasheet page 1 preview

GENERAL DESCRIPTION

Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.

FEATURES

● VDS=60V;ID=68A@ VGS=10V; RDS(ON)<8.4mΩ @ VGS=10V
● Ultra Low On-Resistance
● High UIS and UIS 100% Test Application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply CS60N06A To-220 Top View Schematic Diagram VDS = 60 V ID = 68A RDS(ON) = 7mΩ Package Marking and Ordering Information Device Marking Device Device Package CS60N06A CS60N06A TO-220 Reel Size - Table 1.

ABSOLUTE MAXIMUM RATINGS

(TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Powe
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